SI6415DQ vishay siliconix document number: 70639 s-49519erev. b, 18-dec-96 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.019 @ v gs = 10 v 6.5 30 0.030 @ v gs = 4.5 v 5.2 SI6415DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view s* g d p-channel mosfet * source pins 2, 3, 6 and 7 must be tied common.
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 6.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 5.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.5 maximum power dissipation a t a = 25 c p d 1.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 83 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI6415DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70639 s-49519erev. b, 18-dec-96
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 25 a on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a drain source on state resistance a r ds( ) v gs = 10 v, i d = 6.5 a 0.015 0.019 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 5.2 a 0.022 0.030 forward transconductance a g fs v ds = 15 v, i d = 6.5 a 18.5 s diode forward voltage a v sd i s = 1.5 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g v15vv10vi65a 47 70 c gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 6.5 a 9.5 nc gate-drain charge q gd 8 turn-on delay time t d(on) v15vr15 16 30 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 17 30 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 73 110 ns fall time t f 31 60 source-drain reverse recovery time t rr i f = 1.5 a, di/dt = 100 a/ s 40 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6415DQ vishay siliconix document number: 70639 s-49519erev. b, 18-dec-96 www.vishay.com faxback 408-970-5600 2-3
0 5 10 15 20 25 30 0246810 0 2 4 6 8 10 0 1020304050 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 0.007 0.014 0.021 0.028 0.035 0 6 12 18 24 30 0 900 1800 2700 3600 4500 0 6 12 18 24 30 0 5 10 15 20 25 30 012345 v gs = 10 thru 4 v 3 v v gs = 4.5 v v gs = 10 v v gs = 10 v i d = 6.5 a c rss c oss c iss output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) t c = 125 c 55 c 25 c v ds = 15 v i d = 6.5 a
SI6415DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70639 s-49519erev. b, 18-dec-96
0 50 60 20 30 40 10 1.25 1.50 power (w) 0 0.02 0.04 0.06 0.08 0.10 0246810 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 1 10 20 i d = 6.5 a i d = 250 a duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 0 11030 1. duty cycle, d = 2. per unit base = r thja = 83 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) 0.1 0.00 0.25 0.50 0.75 1.00 t j = 25 c t j = 150 c
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